K. Postava et al., Optical characterization of TiN/SiO2(1000 nm)/Si system by spectroscopic ellipsometry and reflectometry, APPL SURF S, 175, 2001, pp. 270-275
Titanium nitride (TiN) films are used as diffusion barrier layers in the se
miconductor industry. There is a need for accurate data on optical properti
es, because film thickness are usually monitored by optical methods. There
are further needs to characterize TiN/(interlayer dielectrics)/Si system si
multaneously. Thus, TiN(35, 60, 90 and 105 nm)/SiO2(1000 nm)/Si samples wer
e prepared using sputtering from a TiN target in argon and nitrogen atmosph
ere. Those samples were characterized using simultaneous fits of multiple a
ngle of incidence spectroscopic ellipsometry and normal incidence spectrosc
opic reflectivity. TiN films partially transmit light that interferes in th
e thick thermal silicon oxide, which gives more detailed information on the
optical properties of TIN. Consequently optical dielectric function of TiN
as well as two thickness of TIN and SiO2 were successfully determined simu
ltaneously. (C) 2001 Elsevier Science B.V. All rights reserved.