Key issues for the growth of high quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular beam epitaxy

Authors
Brandt, O Muralidharan, R Thamm, A Waltereit, P Ploog, KH
Citation
O. Brandt et al., Key issues for the growth of high quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular beam epitaxy, APPL SURF S, 175, 2001, pp. 419-427
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
175
Year of publication
2001
Pages
419 - 427
Database
ISI
SICI code
0169-4332(20010515)175:<419:KIFTGO>2.0.ZU;2-U
Abstract
We identify and discuss the essential strategies for the growth of (Al,Ga)N /GaN and GaN/(In,Ga)N heterostructures on SiC(0 0 0 1) by both plasma-assis ted and reactive molecular beam epitaxy. Substrate preparation, nucleation, and growth conditions are optimized for simultaneously satisfying the requ irement of a high structural, morphological, optical and electrical quality . The results demonstrate that molecular beam epitaxy is a competitive tech nique for the growth of group III-nitrides. (C) 2001 Elsevier Science B.V. All rights reserved.