Growth of CdTe islands on ZnTe by hot-wall epitaxy

We investigated the growth of self-organized CdTe islands on ZnTe(0 0 1) us ing hot-wall epitaxy (HWE), and recognized the formation of CdTe islands fo r the first time by HWE. ZnTe(0 0 1) layers used for islands formation were grown on CdTe (4 nm thick) buffer layer deposited on GaAa(0 0 1) By HWE. T he precise control of CdTe layer was performed by alternate deposition of C d and Te in auto regulated manner (ARM). The atomic force microscope (AFM) measurements of the grown surface revealed the formation of islands with th e size of about 25 nm in base diameter, 1 nm in height and with the density of 10(11) cm(-2). (C) 2001 Elsevier Science B.V. All rights reserved.