UHV aluminium oxide on silicon substrates: electron spectroscopies analysis and electrical measurements

Thin Al2O3 films were prepared using a special evaporation cell permitting to grow clean and stoichiometric layers in ultrahigh vacuum conditions. The layers were deposited on silicon substrates at different preparation condi tions. The obtained films were characterized by Auger electron spectroscopy (AES, in situ) and by XPS (ex situ) methods. The good quality of layers, s hown by the electron spectroscopy methods, was confirmed by capacitance-vol tage (C-V) electrical measurements. (C) 2001 Elsevier Science B.V. All righ ts reserved.