Structural and in depth characterization of newly designed conducting/insulating TiNxOy/TiO2 multilayers obtained by one step LP-MOCVD growth

TiNxOy/TiO2 multilayers have been grown by LP-MOCVD using titanium isopropo xide (TIP) precursor during the whole growth, but with an ammonia how inter rupted for the TiO2 layers. The one step growth process used to grow these structures allowed to stack the conducting and insulating layers without an y growth breakdown. SIMS and TEM analyses showed the presence of an alterna ted insulating/conducting layers structure. Moreover, electrical measuremen ts allowed to measure the dielectric part of insulating TiO2 stacked in the se structures, whose permittivity was found to be about 80 for a MOS struct ure. Thus, such multilayers may lead to very promising applications in the microelectronics field. (C) 2001 Elsevier Science B.V. All rights reserved.