Characterization of TiOx film prepared by plasma enhanced chemical vapor deposition using a multi-jet hollow cathode plasma source

The high rate deposition of Tig, film at low temperature was achieved by pl asma enhanced chemical vapor deposition (PECVD) using titanium tetraisoprop oxide (TTIP) as a source material. The multi-jet hollow cathode plasma sour ce was used to generate the high-density plasma. which was showered toward the substrate. The emission spectra suggest that oxygen radicals play an im portant role for dissociation of the source material and for yielding the p recursors. The high deposition rate up to 50 nm/min was achieved by this pr ocess. The as-deposited films are completely amorphous. They consist of structures with complex bondings including both tetrahedral and octahedral components . Though they have such complex bondings, the hydrophilicity of the PECVD f ilm is excellent comparing to that of the annealed crystalline anatase stru cture. It seems that the PECVD using the multi-jet plasma source is promisi ng for fabrication of hydrophilic TiOx films in low-temperature process. (C ) 2001 Elsevier Science B.V. All rights reserved.