In this review we describe the results of magneto-transport studies in
open quantum dots, in which electronic motion is expected to be predo
minantly ballistic in nature. The devices themselves are realized in d
ifferent semiconductor materials, using quite distinct fabrication tec
hniques. Electron interference is an important process in determining
the electrical properties of the devices at low temperatures and is ma
nifested through the observation of periodic magneto-conductance fluct
uations. These are found to result from selective excitation of discre
te cavity eigenstates by incoming electrons, which are directed into a
collimated beam by the input point contact. Under conditions of such
restricted injection, quantum mechanical simulations reveal highly cha
racteristic wavefunction scarring? associated with the remnants of a f
ew classical orbits. The scarring is built up by interference between
electrons, confined within the cavities over very long time scales, su
ggesting the underlying orbits are highly stable in nature. This chara
cteristic is also confirmed by the results of experiment, which reveal
the discrete components dominating the interference to be insensitive
to changes in lead opening or temperature. The fluctuations decay wit
h increasing temperature, although they can nonetheless still be resol
ved at a few degrees kelvin. This characteristic is confirmed by indep
endent studies of devices, fabricated using very different techniques,
further demonstrating the universal nature of the behavior we discuss
here. These results therefore demonstrate that the correct descriptio
n of electron interference in open quantum cavities, is one in which o
nly a few discrete orbits are excited by the collimating action of the
input lead, giving rise to striking wavefunction scarring with measur
able magneto-transport results. (C) 1997 Elsevier Science Ltd.