Extreme-ultraviolet lithography shrinks silicon-wafer patterns to 0.03 mu m

Authors
Grossman, S
Citation
S. Grossman, Extreme-ultraviolet lithography shrinks silicon-wafer patterns to 0.03 mu m, ELECTR DES, 49(12), 2001, pp. 28-28
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONIC DESIGN
ISSN journal
00134872 → ACNP
Volume
49
Issue
12
Year of publication
2001
Pages
28 - 28
Database
ISI
SICI code
0013-4872(20010604)49:12<28:ELSSPT>2.0.ZU;2-2