A vertical resonant tunneling transistor (VRTT) has been developed, its pro
perties and its application in digital logic circuits based on the monostab
le-bistable transition logic element (MOBILE) principle are described. The
device consists of a small mesa resonant tunneling diode (RTD) in the GaAs/
AlAs material system surrounded by a Schottky gate. We obtain low peak volt
ages using InGaAs in the quantum well and the devices show an excellent pea
k current control by means of an applied gate voltage. A self latching inve
rter circuit has been fabricated using two VRTTs and the switching function
ality was demonstrated at low frequencies.