A vertical resonant tunneling transistor for application in digital logic circuits

Citation
J. Stock et al., A vertical resonant tunneling transistor for application in digital logic circuits, IEEE DEVICE, 48(6), 2001, pp. 1028-1032
Citations number
12
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
48
Issue
6
Year of publication
2001
Pages
1028 - 1032
Database
ISI
SICI code
0018-9383(200106)48:6<1028:AVRTTF>2.0.ZU;2-K
Abstract
A vertical resonant tunneling transistor (VRTT) has been developed, its pro perties and its application in digital logic circuits based on the monostab le-bistable transition logic element (MOBILE) principle are described. The device consists of a small mesa resonant tunneling diode (RTD) in the GaAs/ AlAs material system surrounded by a Schottky gate. We obtain low peak volt ages using InGaAs in the quantum well and the devices show an excellent pea k current control by means of an applied gate voltage. A self latching inve rter circuit has been fabricated using two VRTTs and the switching function ality was demonstrated at low frequencies.