High-performance bottom electrode organic thin-film transistors

Pentacene-based organic field effect transistors (FETs) exhibit enormous po tential as active elements in a number of applications. One significant obs tacle to commercial application remains: no completely lithographic process exists for forming high-performance devices. Processing constraints preven t electrodes from being lithographically patterned once the semiconductor i s deposited, but depositing the electrodes before the semiconductor leads t o low-performance transistors. By using self-assembled monolayers (SAMs) to change the surface energy of the metal electrodes and morphology of the pe ntacene subsequently grown on the electrodes, high-performance transistors may be formed using a process compatible with lithographic definition of th e source and drain electrodes.