High-performance bottom electrode organic thin-film transistors

Citation
I. Kymissis et al., High-performance bottom electrode organic thin-film transistors, IEEE DEVICE, 48(6), 2001, pp. 1060-1064
Citations number
19
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
48
Issue
6
Year of publication
2001
Pages
1060 - 1064
Database
ISI
SICI code
0018-9383(200106)48:6<1060:HBEOTT>2.0.ZU;2-I
Abstract
Pentacene-based organic field effect transistors (FETs) exhibit enormous po tential as active elements in a number of applications. One significant obs tacle to commercial application remains: no completely lithographic process exists for forming high-performance devices. Processing constraints preven t electrodes from being lithographically patterned once the semiconductor i s deposited, but depositing the electrodes before the semiconductor leads t o low-performance transistors. By using self-assembled monolayers (SAMs) to change the surface energy of the metal electrodes and morphology of the pe ntacene subsequently grown on the electrodes, high-performance transistors may be formed using a process compatible with lithographic definition of th e source and drain electrodes.