Characteristics of low-temperature poly-Si TFTs on Al/glass substrates

The low-temperature poly-Si TFTs described here were fabricated on the Al/g lass substrates by anodic oxidation of Al. An Al layer on glass substrates can be used to control threshold voltage, improve stabilities, and suppress the temperature rise due to self-heating. The Al layer on glass, thus, ass uring the improved reliability of displays, using this type of TFT, effecti vely suppressed the self-heating effect of poly-Si TFTs on glass. The thres hold voltage of a TFT with an Al layer was more stable than that without an Al layer. These results were supported by numerical analysis.