A high-density DRAM cell with built-in gain stage

Authors
Kamoulakos, G Tsiatouhas, Y Chrisanthopoulos, A Arapoyanni, A
Citation
G. Kamoulakos et al., A high-density DRAM cell with built-in gain stage, IEEE DEVICE, 48(6), 2001, pp. 1194-1199
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
48
Issue
6
Year of publication
2001
Pages
1194 - 1199
Database
ISI
SICI code
0018-9383(200106)48:6<1194:AHDCWB>2.0.ZU;2-7
Abstract
A high-density DRAM cell is proposed with a built-in vertical gain device t opology. Due to the vertical built-in gain device, this cell exhibits incre ased reading speed, elongated refresh period, low-power oriented operation, and minor layout area penalty.