Characterization of random reactive ion etched-textured silicon solar cells

Hemispherical reflectance and internal quantum efficiency (IQE) measurement s have been employed to evaluate the response of Si nanostructured surfaces formed by using reactive ion etching (RIE) random texturing techniques. Ra ndom RIE-textured surfaces typically exhibit broadband anti-reflection beha vior with solar-weighted-reflectance (SWR) of approximate to3% over 300-120 0-nm spectral range. RIE-texturing has been demonstrated over large areas ( similar to 180 cm(2)) of both single and multicrystalline Si substrates. Du e to the surface contamination and plasma-induced damage, as formed RIE-tex tured solar cells do not provide enhanced short-circuit current. However, i mproved surface cleaning combined with controlled wet-chemical damage remov al etches provide a significant improvement in the short-circuit current. F or such textures, the internal quantum efficiencies are comparable to the r andom, wet-chemically-textured solar cells. In both the W and near-IR wavel ength regions, the RTE-textured subwavelength surfaces exhibit superior per formance in comparison with the wet-chemically-textured surfaces. Due to th eir large area, low-reflection capability, random, RIE-texturing techniques are expected to find widespread commercial applicability in low-cost, larg e-area multicrystalline Si solar cells.