High-voltage power integrated circuit technology using SOI for driving plasma display panels

Citation
J. Kim et al., High-voltage power integrated circuit technology using SOI for driving plasma display panels, IEEE DEVICE, 48(6), 2001, pp. 1256-1263
Citations number
15
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
48
Issue
6
Year of publication
2001
Pages
1256 - 1263
Database
ISI
SICI code
0018-9383(200106)48:6<1256:HPICTU>2.0.ZU;2-0
Abstract
A new high-voltage (HV) power IC technology using high-performance p-LDMOS transistors and an excellent dielectric isolation technology has been propo sed to apply scan driver of color plasma display panel (C-PDP) system. This novel technique reduces over 40 process steps and results in smaller chip size area of the developed scan driver than that of conventional driver usi ng conventional power IC technology. The chip size and the rise time of the PDP scan driver IC developed by this technology could be reduced by 35 % a nd 60 %,respectively, compared with the conventional one.