Simulation of power heterojunction bipolar transistors on gallium arsenide

We demonstrate the results of two-dimensional (2-D) hydrodynamic simulation s of one-finger power heterojunction bipolar transistors (HBTs) on GaAs. An overview of the physical models used and comparisons with experimental dat a are given. We present models for the thermal conductivity and the specifi c heat applicable to all relevant diamond and zinc-blende structure semicon ductors. They are expressed as functions of the lattice temperature and, in the case of semiconductor alloys, of the material composition.