Impact of N2O activation treatment on junction characteristics of p(+)/n junctions formed by a solid diffusion source

Authors
Yang, WL Liu, DG Chu, KW
Citation
Wl. Yang et al., Impact of N2O activation treatment on junction characteristics of p(+)/n junctions formed by a solid diffusion source, IEEE DEVICE, 48(6), 2001, pp. 1277-1279
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
48
Issue
6
Year of publication
2001
Pages
1277 - 1279
Database
ISI
SICI code
0018-9383(200106)48:6<1277:IONATO>2.0.ZU;2-E
Abstract
P+/N junctions formed by a solid-boron-source under different activation am bient gases have been investigated. It was found that the junction depth st rongly depends on the activation ambient gas and the corresponding flow rat e. Especially in the N2O ambient, the diffusion of boron is enormously enha nced. Furthermore, the thermal stability of CoSi2 is profoundly improved by the N2O treatment during activation.