A new method of growing multiple gate oxide thicknesses below 5 nm using ma
sked oxygen implantation is presented. Multiple thicknesses can be achieved
on the same wafer without degradation in the oxide properties. The oxygen
implanted oxide quality is comparable to that of thermally grown oxides. Mo
reover, the effects of oxygen implant damage is minimized with higher impla
nt energies, thicker sacrificial oxides, and low-temperature annealing.