Fabrication of monolithically-integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb resonant interband tunneling diodes

Authors
Fay, P Jiang, L Xu, Y Bernstein, GH Chow, DH Schulman, JN Dunlap, HL De Los Santos, HJ
Citation
P. Fay et al., Fabrication of monolithically-integrated InAlAs/InGaAs/InP HEMTs and InAs/AlSb/GaSb resonant interband tunneling diodes, IEEE DEVICE, 48(6), 2001, pp. 1282-1284
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
48
Issue
6
Year of publication
2001
Pages
1282 - 1284
Database
ISI
SICI code
0018-9383(200106)48:6<1282:FOMIHA>2.0.ZU;2-D
Abstract
The integration of InAs/AlSb/GaSb resonant interband tunneling diodes (RITD s) with InAlAs/InGaAs/InP high electron mobility transistors (HEMTs) is rep orted. The integrated devices exhibit nearly identical performance to discr ete control devices from de through microwave frequencies. RITDs with peak current densities of 24.5 kA/cm(2) and peak voltages of 0.12 V have been de monstrated for devices with 1.2-nm thick AlSb barriers. HEMTs with 0.2-mum gates have been fabricated, and f(t)s of 127 GHz and f(max)s of 183 GHz hav e been obtained. To the authors' knowledge, this is the first report of the monolithic integration of RITDs with HEMTs on InP.