A second harmonic class-F power amplifier in standard CMOS technology

For personal communications systems, the highest possible integration on mo nolithic technology of all RF functions is desirable. The most difficult co mponent to be monolithically integrated with all other functions is the out put power amplifier. This paper describes the design and test of an integra ted class-F power amplifier with 200-mW output power at 1.9 GHz and a 3-V p ower supply based on a 0.6-mum CMOS standard technology. A theoretical stud y of class-F operation that highlights the influence of nonideal active dev ices and output network topology on the circuit behavior was performed to h ave guidelines for amplifier optimization.