Performance of Ku-band on-chip matched Si monolithic amplifiers using 0.18-mu m-gatelength MOSFETs

We demonstrated Ku-band (12-20 GHz) Si MOSFET monolithic amplifiers with on -chip matching networks. In these amplifiers, we used 3-mum-thick Al-metal transmission lines on 8-mum-thick polyimide-SiON-SiO2 isolation layers for the matching networks, The amplifier showed a gain of 6-10 dB and a noise f igure (NF) of 3.5-4 dB up to about 20 GHz, the highest gain and lowest NF y et reported for MOSFET amplifiers at this frequency. We also clarified the lossy on-chip inductor effect on the gain and noise performance of the ampl ifiers.