Composition and properties of layered compounds in the GeTe-Sb2Te3 system

Citation
Le. Shelimova et al., Composition and properties of layered compounds in the GeTe-Sb2Te3 system, INORG MATER, 37(4), 2001, pp. 342-348
Citations number
30
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INORGANIC MATERIALS
ISSN journal
00201685 → ACNP
Volume
37
Issue
4
Year of publication
2001
Pages
342 - 348
Database
ISI
SICI code
0020-1685(200104)37:4<342:CAPOLC>2.0.ZU;2-Y
Abstract
The 620-K section of the Ge-Sb-Te phase diagram was mapped out using x-ray diffraction, microstructural analysis, and microhardness measurements. The transport properties of the layered tetradymite-like compounds nGeTe . mSb( 2)Te(3) (n, m = 1-4) were studied in wide temperature ranges (Hall effect a nd electrical resistivity, from 77 to 800 K, and thermoelectric power, from 90 to 450 K). The results show that the nGeTe . mSb(2)Te(3) compounds are degenerate p-type semiconductors with a fairly high hole concentration due to the high density of intrinsic point defects. The temperature dependences of the Hall coefficient and resistivity exhibit anomalies related to solid -state phase transitions. The room-temperature lattice thermal conductivity of nGeTe . mSb(2)Te(3) is fairly low, in the range 8-10 mW/(cm K).