Characterization of ZrO2 and SiC ceramic thin films prepared by electrostatic atomization

Citation
P. Miao et al., Characterization of ZrO2 and SiC ceramic thin films prepared by electrostatic atomization, J MATER SCI, 36(12), 2001, pp. 2925-2930
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE
ISSN journal
00222461 → ACNP
Volume
36
Issue
12
Year of publication
2001
Pages
2925 - 2930
Database
ISI
SICI code
0022-2461(2001)36:12<2925:COZASC>2.0.ZU;2-J
Abstract
ZrO2 and SiC ceramic thin films and their bilayer have been successfully pr epared by a newly developed electrostatic atomization technique. This techn ique can generate fine spray of ceramic suspensions in a micrometer sized r ange with a narrow size distribution which is crucial for preparation of un iform thin films of these ceramic materials. Compared to some other thin fi lm deposition techniques, such as Chemical vapour deposition (CVD), physica l vapour deposition (PVD) and plasma spray (PS) etc. the thin film depositi on process using electrostatic atomization is not only cheap but also contr ollable. The prepared ZrO2 and SiC thin films were investigated using scann ing electron microscopy (SEM) and energy dispersion analysis (EDA) techniqu es. These thin films were observed to be homogenous with a particle size le ss than 10 mum. The ZrO2-SiC bilayer was found to have an abrupt interface, implying that the deposition process is controllable and also that functio nally graded ceramic/ceramic materials can be prepared in this way if the t hickness of each layer is accurately controlled. (C) 2001 Kluwer Academic P ublishers.