A. Mazuelas et al., Observation of dislocation generation in highly strained quantum well lasers during operation, J PHYS D, 34(10A), 2001, pp. A117-A121
For the first time, we have obtained the real-time observation, by x-ray to
pography, of the laser degradation due to the formation of misfit dislocati
ons. We drive the laser diode under a high-energy, high-flux synchrotron mi
cro-x-ray beam. We simultaneously obtain both the laser characteristic curv
e and the structural characteristics during operation, i.e. the presence of
misfit dislocations, laser diode curvature and strain status. From the str
ain we measure the temperature increase in the epilayer due to the injectio
n current. In other lasers device degradation occurred without the formatio
n of misfit dislocations, but by mass transport, and in other lasers no str
uctural degradation was observed.