Application of Bragg-case section topography for strain profile determination in A(III)B(V) implanted semiconductors

Authors
Wieteska, K Wierzchowski, W Graeff, W Turos, A
Citation
K. Wieteska et al., Application of Bragg-case section topography for strain profile determination in A(III)B(V) implanted semiconductors, J PHYS D, 34(10A), 2001, pp. A122-A127
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN journal
00223727 → ACNP
Volume
34
Issue
10A
Year of publication
2001
Pages
A122 - A127
Database
ISI
SICI code
0022-3727(20010521)34:10A<A122:AOBSTF>2.0.ZU;2-L
Abstract
Simultaneous analysis of strain modulation fringes in synchrotron Bragg-cas e section patterns and rocking curves recorded with a very narrow probe bea m was used for the determination of strain profiles in GaAs implanted with high doses of 1.5 MeV Se ions. The existence of two components of the strai n was revealed: the first is due to the introduced interstitial defects of the matrix crystal and the second is directly connected with introduced Se ions. These two components significantly differed in their depth profiles a nd their behaviour upon thermal annealing.