Dynamical diffraction imaging of voids in nearly perfect silicon

Citation
T. Tuomi et al., Dynamical diffraction imaging of voids in nearly perfect silicon, J PHYS D, 34(10A), 2001, pp. A133-A135
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN journal
00223727 → ACNP
Volume
34
Issue
10A
Year of publication
2001
Pages
A133 - A135
Database
ISI
SICI code
0022-3727(20010521)34:10A<A133:DDIOVI>2.0.ZU;2-4
Abstract
X-ray diffraction topographs of extremely pure and perfect silicon single c rystals are made using low-energy undulator radiation from a positron stora ge ring. Typical defect images observed are rather large round images havin g a black-white contrast and a diameter of about 40 mum. Applying the dynam ical theory of x-ray diffraction, the defect contrast is explained by tensi le strain in the lattice around voids close to the exit surface. This disco very of void-like microdefects explains, at least in part, the reduced dens ity of the crystal intended to be used for a redefinition of the unit of ma ss, the kilogram.