Measurement of dislocation distributions by means of X ray diffraction

Citation
Jd. Kamminga et R. Delhez, Measurement of dislocation distributions by means of X ray diffraction, MAT SCI E A, 309, 2001, pp. 55-59
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
ISSN journal
09215093 → ACNP
Volume
309
Year of publication
2001
Pages
55 - 59
Database
ISI
SICI code
0921-5093(20010715)309:<55:MODDBM>2.0.ZU;2-8
Abstract
The dislocation arrangement in an Al layer with a (1 1 1) fibre texture on an oxidised Si(1 0 0) substrate has been investigated, using X-ray diffract ion line broadening. Tensile stress was induced in the layer by annealing t he specimen for 1h at 673 K and subsequently cooling the specimen down to r oom temperature. After cooling down, the dislocation arrangement as a funct ion of time was investigated using the diffraction line broadening of two d iffraction lines. It has been obtained that predominantly screw dislocation s with Burgers vectors inclined to the specimen surface occur. The dislocat ion density decreased as a function of time, whereas an increasing outer cu t-off radius has been measured. (C) 2001 Elsevier Science B.V. Al rights re served.