Effect of dislocation distribution on the high-field magnetoresistivity ofpure metal single crystals

The transverse magnetoresistivity of pure tungsten and molybdenum single cr ystals was measured in temperature range from 2 to 80 K and in magnetic fie lds up to 30 T The samples contain chaotically distributed dislocations pro duced under deformation by compression and dislocation walls formed during crystal growth. It was shown that dislocations strongly affect the magnetor esistivity of these pure metals. It was demonstrated experimentally that th e peculiarities of the electron-dislocation scattering and its contribution to magnetoresistivity substantially depend on the dislocation structure. T he electron interaction with the chaotically distributed dislocations leads to a change of the electron orbit types and to the dislocation breakdown. The electron scattering by dislocation walls can lead to the internal stati c skin effect, i.e. a concentration of a de current near walls of dislocati ons. We discuss some possibilities to use the magnetoresistance effect as a new method to analyze the dislocation distribution in pure metal single cr ystals. (C) 2001 Elsevier Science B.V. All rights reserved.