Interband tunneling depopulation in type-II InAs/GaSb cascade laser heterostructure

Authors
Kisin, MV Stroscio, MA Luryi, S Belenky, G
Citation
Mv. Kisin et al., Interband tunneling depopulation in type-II InAs/GaSb cascade laser heterostructure, PHYSICA E, 10(4), 2001, pp. 576-586
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA E
ISSN journal
13869477 → ACNP
Volume
10
Issue
4
Year of publication
2001
Pages
576 - 586
Database
ISI
SICI code
1386-9477(200106)10:4<576:ITDITI>2.0.ZU;2-N
Abstract
An exact analytical representation has been obtained for electron eigenstat es in the full isotropic 8-band Kane model and applied to calculate the dep opulation rate of the lower lasing state in the active region of a type-II intersubband cascade laser. We show that interband tunneling rate takes its maximum value when the depopulated states belong to the upper of the coupl ed electron- and hole-like subbands in the "leaky window" of the broken-gap InAs/GaSb heterostructure. (C) 2001 Elsevier Science B.V. All rights reser ved.