Fano resonances in semiconductor superlattices

Citation
Tw. Canzler et al., Fano resonances in semiconductor superlattices, PHYSICA E, 10(4), 2001, pp. 593-596
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA E
ISSN journal
13869477 → ACNP
Volume
10
Issue
4
Year of publication
2001
Pages
593 - 596
Database
ISI
SICI code
1386-9477(200106)10:4<593:FRISS>2.0.ZU;2-C
Abstract
We use semiconductor superlattices as a model system for the investigation of Fano resonances. In absorption the excitonic transitions of the Wannier- Stark ladder show the typical asymmetric line shape due to coupling to the continuum of lower-lying transitions. The unique feature of these Fano reso nances is that they allow to continuously tune the key parameter - the coup ling strength Gamma between the discrete state and the degenerate continuum - by varying the bias voltage. Using this feature, we directly show that t he Fano coupling leads to a fast polarization decay. We also investigate th e dependence of the Fano parameters on the structure of the superlattice an d compare with an extensive theoretical model of the resonances. (C) 2001 E lsevier Science B.V. All rights reserved.