Room-temperature ultraviolet Lasing in semiconductor nanowire arrays has be
en demonstrated. The self-organized, <0001> oriented zinc oxide nanowires g
rown on sapphire substrates were synthesized with a simple vapor transport
and condensation process. These wide band-gap semiconductor nanowires form
natural Laser cavities with diameters varying from 20 to 150 nanometers and
Lengths up to 10 micrometers. Under optical excitation, surface-emitting l
asing action was observed at 385 nanometers, with an emission Linewidth les
s than 0.3 nanometer. The chemical flexibility and the one-dimensionality o
f the nanowires make them ideal miniaturized Laser Light sources. These sho
rt-wave-length nanolasers could have myriad applications, including optical
computing, information storage, and microanalysis.