The effects of Ga incorporation on goethite were investigated by using X-ra
y diffractometry (XRD), particle-induced X-ray emission (PIXE), susceptibil
ity measurements and Mossbauer spectroscopy (MS). Samples GaxFe1-xOOH were
prepared with x = 0.00, 0.01, 0.03, 0.05, 0.10, 0.35 and 0.70. All the samp
les are single-phase and an accurate observation of the structure refinemen
t procedure makes clear the sample-dependent structural behaviour. A model
is proposed in which the main effect of Ga incorporation is to reduce the c
rystallite dimensions. (C) 2001 Elsevier Science Ltd. All rights reserved.