We present the results of effective mass calculations for the optical prope
rties of stacked quantum dots in the presence of a longitudinal electric fi
eld. Attention is focused on strongly stacked dots structures where we show
that a vertical field acts on the electron much in the same way as found i
n one-dimensional quantum well structures. As a consequence their Stark tun
ability can be made much larger than their inhomogeneous broadening. The el
ectro-optical absorption probabilities of stacked dots for intraband and in
terband transitions are quantitatively calculated taking into account gauss
ian fluctuations in the vertical and lateral dimensions. (C) 2001 Elsevier
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