A first principles full potential self-consistent linear muffin tin orbital
(FPLMTO) method alongwith density functional theory in the local approxima
tion has been employed to investigate the structural and electronic propert
ies of seven Ga1-xAlxAs alloys in their ordered and random configurations.
A linear (non-linear) variation of the lattice constant with the concentrat
ions of the constituent atoms is seen for the ordered (random) structures.
A direct to indirect band gap crossover takes place for x = 0.375, Also, a
band gap bowing below and above the crossover for both the direct and indir
ect band gaps is seen. The direct and indirect band gaps obtained for the o
rdered structures are in very good agreement with the photoluminescence and
absorption data available. Our results support the occurrence of the well
ordered structures in the alloys. (C) 2001 Elsevier Science Ltd. All rights
reserved.