A first-principles study of structural and electronic properties of Ga1-xAlxAs alloys

Citation
R. Srivastava et al., A first-principles study of structural and electronic properties of Ga1-xAlxAs alloys, SOL ST COMM, 118(9), 2001, pp. 479-484
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
118
Issue
9
Year of publication
2001
Pages
479 - 484
Database
ISI
SICI code
0038-1098(2001)118:9<479:AFSOSA>2.0.ZU;2-0
Abstract
A first principles full potential self-consistent linear muffin tin orbital (FPLMTO) method alongwith density functional theory in the local approxima tion has been employed to investigate the structural and electronic propert ies of seven Ga1-xAlxAs alloys in their ordered and random configurations. A linear (non-linear) variation of the lattice constant with the concentrat ions of the constituent atoms is seen for the ordered (random) structures. A direct to indirect band gap crossover takes place for x = 0.375, Also, a band gap bowing below and above the crossover for both the direct and indir ect band gaps is seen. The direct and indirect band gaps obtained for the o rdered structures are in very good agreement with the photoluminescence and absorption data available. Our results support the occurrence of the well ordered structures in the alloys. (C) 2001 Elsevier Science Ltd. All rights reserved.