Ablation plasma ion implantation experiments: Measurement of Fe implantation into Si

Experiments have been performed demonstrating the feasibility of direct imp lantation of laser-ablated metal ions into a substrate. Initial experiments implanted iron ions into silicon substrates at pulsed, bias voltages up to negative 10 kV. Implantation of Fe ions into Si was confirmed by cross-sec tional transmission electron microscopy and x-ray photoelectron spectroscop y. The 7.6 nm depth of damage layers below the Si surface is slightly less than predicted by code calculations for a maximum, effective ion energy of about 8 keV. The ion depth of penetration is limited by the overlying Fe fi lm as well as the slow rise and fall of the voltage. (C) 2001 American Inst itute of Physics.