Characterization of electron-irradiated n-GaN

Using deep level transient spectroscopy, we have investigated the electron trap defects introduced in n-GaN grown using the epitaxial lateral overgrow th technique during high energy electron irradiation from a Sr-90 radionucl ide source. The results indicate that the major electron-irradiation-induce d defect labeled ER3 is not a single defect level but is made up of at leas t three defect levels (ER3b-ER3d). One of these defects, ER3d, has an activ ation energy and introduction rate of 0.22 eV and 0.43 cm(-1), respectively . The total introduction rate of the three defects (ER3b-ER3d) is approxima tely 1.0 cm(-1). (C) 2001 American Institute of Physics.