Citation
Xg. Zheng et al., Multiplication noise of AlxGa1-xAs avalanche photodiodes with high Al concentration and thin multiplication region, APPL PHYS L, 78(24), 2001, pp. 3833-3835
Citations number
33
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951
→ ACNP
Volume
78
Issue
24
Year of publication
2001
Pages
3833 - 3835
Database
ISI
SICI code
0003-6951(20010611)78:24<3833:MNOAAP>2.0.ZU;2-F
Abstract
We report that homojunction AlxGa1-xAs avalanche photodiodes (APDs) exhibit
very low multiplication noise when the Al content is greater than or equal
to 80%. It was also found that, due to nonlocal effects, the multiplicatio
n noise decreased as the ionization region thickness was reduced from 0.8 m
um to less than or equal to0.2 mum for Al ratios (from 0 to 0.9). The exces
s noise factor of the thin (140 nm) Al0.9Ga0.1As APDs is the lowest reporte
d to date for III-V compounds and is comparable to that of Si avalanche pho
todiodes. (C) 2001 American Institute of Physics.