Monolayer oscillation observed by an oblique-incidence reflectance difference technique for the epitaxial growth of oxides

Citation
F. Chen et al., Monolayer oscillation observed by an oblique-incidence reflectance difference technique for the epitaxial growth of oxides, CHIN PHYS L, 18(5), 2001, pp. 665-667
Citations number
15
Categorie Soggetti
Physics
Journal title
CHINESE PHYSICS LETTERS
ISSN journal
0256307X → ACNP
Volume
18
Issue
5
Year of publication
2001
Pages
665 - 667
Database
ISI
SICI code
0256-307X(200105)18:5<665:MOOBAO>2.0.ZU;2-8
Abstract
We report the optical oscillations with monolayer periodicity observed by a n oblique-incidence reflectance difference (OIRD) technique on the epitaxia l growth of Nb-doped SrTiO3 on SrTiO3 substrate. The periodicity was verifi ed by the simultaneously measured reflection high-energy electron diffracti on intensity oscillations. The OIRD oscillation damps during deposition, bu t can recover after the growth is interrupted for some time. We interpret t he optical oscillations as a result of the periodic changes of the surface morphologies due to the two-dimensional layer-by-layer growth of thin films .