P- and n-doping processes in polythiophene with reduced bandgap. An electrochemical impedance spectroscopy study

Citation
H. Ding et al., P- and n-doping processes in polythiophene with reduced bandgap. An electrochemical impedance spectroscopy study, ELECTR ACT, 46(17), 2001, pp. 2721-2732
Citations number
29
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHIMICA ACTA
ISSN journal
00134686 → ACNP
Volume
46
Issue
17
Year of publication
2001
Pages
2721 - 2732
Database
ISI
SICI code
0013-4686(20010515)46:17<2721:PANPIP>2.0.ZU;2-X
Abstract
Electrochemical impedance spectroscopy has been used for the characterisati on of electrodes modified with different polythiophenes, namely poly[4,4 ' -bis(butylsulfanyl)-2,2 ' -bithiophene], poly[4,4 ' -bis(methylsulfanyl)-2, 2 ' -bithiophene] and poly( 3-methylthiophene), at different applied potent ials, using different supporting electrolytes. By comparison of the results obtained under experimental conditions in which n-doping is prevented and those obtained from tests where it does occur, some general features have b een deduced. all of them being coherently described by a recently proposed 'generalised transmission line circuit' model: impedance plots at different applied potentials exhibit progressive changes which are well accounted fo r by the 'evolving' model. The results obtained on the n-doping process of S-alkyl substituted polymers suggest a behaviour interestingly similar to t hat exhibited in the p-doping: this supports a symmetry that was also found by us in a previous work, with respect to the incorporation and release of counterions during the n- and p-charge-discharge processes. (C) 2001 Elsev ier Science Ltd. All rights reserved.