12 mu m long edge-emitting quantum-dot laser

Citation
S. Rennon et al., 12 mu m long edge-emitting quantum-dot laser, ELECTR LETT, 37(11), 2001, pp. 690-691
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
11
Year of publication
2001
Pages
690 - 691
Database
ISI
SICI code
0013-5194(20010524)37:11<690:1MMLEQ>2.0.ZU;2-#
Abstract
Highly reflecting Bragg mirrors in combination with 2GaLnAs/AlGaAs laser st ructures with two layers of self-organised GaInAS quantum-dots are used to realise CW-operating edge-emitting microlasers with cavity lengths down to 12 mum. Owing to the large spacing of the longitudinal modes of 8.2nm for 1 2 mum long lasers, quasi-singlemode operation is obtained.