Long wavelength metamorphic double heterojunction In0.53Ga0.47As/InAlGaAs/In0.52Al0.48As photodiodes on GaAs substrates

Authors
Jang, JH Cueva, G Dumka, DC Hoke, WE Lemonias, PJ Fay, P Adesida, I
Citation
Jh. Jang et al., Long wavelength metamorphic double heterojunction In0.53Ga0.47As/InAlGaAs/In0.52Al0.48As photodiodes on GaAs substrates, ELECTR LETT, 37(11), 2001, pp. 707-708
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
11
Year of publication
2001
Pages
707 - 708
Database
ISI
SICI code
0013-5194(20010524)37:11<707:LWMDHI>2.0.ZU;2-D
Abstract
The design and performance of metamorphic InGaAs/InGaAlAs/InAlAs double het erojunction photodiodes fabricated on GaAs substrates are presented. A low dark current of 500pA at 5V bias, a responsivity of 0.6 A/W, and a -3 dB ba ndwidth of 38 GHz for 1.55 mum light have been achieved by using a large ba ndgap drift region in conjunction with a digitally graded bandgap layer.