Citation
Cz. Zhao et al., Generation of mobile hydrogenous ions in gate oxide and their potential applications, ELECTR LETT, 37(11), 2001, pp. 716-717
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194
→ ACNP
Volume
37
Issue
11
Year of publication
2001
Pages
716 - 717
Database
ISI
SICI code
0013-5194(20010524)37:11<716:GOMHII>2.0.ZU;2-R
Abstract
It has been reported that mobile hydrogenous ions can be formed in the oxid
e after exposure to temperatures of 1100 -1300 degreesC for 30min. It is in
vestigated whether these ions can be created in a standard MOSFET fabricate
d by a submicron CMOS process. without using such a high thermal budget. Th
r potential use of a MOSFET as a non-volatile memory device is explored and
problems are highlighted.