Simulation of I-V characteristics of organic thin film transistor: Application to the dihexylquaterthiophene

Metal-Insulator-Semiconductor Field-Effect-Transistors based on Dihexyl- qu aterthiophene (DH4T), has been realized. Unlike conventional MISFET, these devices work through the modulation of an accumulation layer at the semicon ductor-insulator interface. An analytical model that describes the operatio n of organic thin-film-transistors based on a simple trap distribution, wit h a single shallow trap level located between the valence-band edge and the Fermi level, has been used to determine some microscopic parameters such a s the mobility, the density of traps and the corresponding level of traps.