Km. Wang et al., RANGE AND THERMAL-BEHAVIOR STUDIES OF TM-CRYSTAL(, ER+ AND YB+ IMPLANTED INTO LINBO3 AND QUARTZ), Materials science & engineering. B, Solid-state materials for advanced technology, 47(2), 1997, pp. 150-154
Tm+, Er+ and Yb+ have been implanted into LiNbO3 and quartz crystal (S
iO2) in the energy range 100-400 keV. The profile of implanted ions wa
s measured by Rutherford backscattering of MeV He ions. The mean proje
cted range and range straggling obtained were compared with TRIM code.
The result shows that (1) The mean projected range and range straggli
ng are in well agreement with TRIM prediction except for 100 keV for L
iNbO3 (2) The mean projected range is in good agreement with TRIM pred
iction within 8%, but the experimental range straggling is higher than
the calculated value by TRIM code for quartz crystal. After 800 degre
es C annealing for 30 min, it is found that there is no obvious diffus
ion for the case of 300 keV Er+, but for the case of 300 keV Yb+ the d
iffusion occurs and the diffusion coefficient D estimated is 2.77 x 10
(-15) cm(2) s(-1). (C) 1997 Elsevier Science S.A.