TRANSMISSION ELECTRON-MICROSCOPY INVESTIGATIONS OF DEFECTS IN MOLECULAR-BEAM EPITAXY-GROWN OXIDE-FILMS

Citation
Ej. Williams et al., TRANSMISSION ELECTRON-MICROSCOPY INVESTIGATIONS OF DEFECTS IN MOLECULAR-BEAM EPITAXY-GROWN OXIDE-FILMS, Journal of alloys and compounds, 251(1-2), 1997, pp. 11-14
Citations number
4
Categorie Soggetti
Chemistry Physical","Metallurgy & Metallurigical Engineering","Material Science
ISSN journal
09258388
Volume
251
Issue
1-2
Year of publication
1997
Pages
11 - 14
Database
ISI
SICI code
0925-8388(1997)251:1-2<11:TEIODI>2.0.ZU;2-G
Abstract
With a view to increasing the superconductive transition temperature o f thin films of La2CuO4 grown by molecular beam epitaxy, films were gr own on substrates of lattice parameters such that the film-substrate m isfit became small and tensile, or compressive. The microstructure of these films was investigated using transmission electron microscopy an d qualitative correlations with physical properties suggested.