AN IMPROVEMENT OF SURFACE SMOOTHNESS AND LATTICE MATCH OF CEO2 BUFFERLAYERS ON R-SAPPHIRE PROCESSED BY MOCVD

Authors
GRABOY IE MARKOV NV MALEEV VV KAUL AR POLYAKOV SN SVETCHNIKOV VL ZANDBERGEN HW DAHMEN KH
Citation
Ie. Graboy et al., AN IMPROVEMENT OF SURFACE SMOOTHNESS AND LATTICE MATCH OF CEO2 BUFFERLAYERS ON R-SAPPHIRE PROCESSED BY MOCVD, Journal of alloys and compounds, 251(1-2), 1997, pp. 318-321
Citations number
4
Categorie Soggetti
Chemistry Physical","Metallurgy & Metallurigical Engineering","Material Science
Journal title
Journal of alloys and compounds → ACNP
ISSN journal
09258388
Volume
251
Issue
1-2
Year of publication
1997
Pages
318 - 321
Database
ISI
SICI code
0925-8388(1997)251:1-2<318:AIOSSA>2.0.ZU;2-N
Abstract
Epitaxial thin films of CeO2 and Ce1-xRxO2-y (R=Y, Nd; x=0-0.32) on R- sapphire were prepared by band flash evaporation MOCVD. It was demonst rated that the smoothness of the films can be improved by a decrease o f deposition rate and by post deposition annealing at 1000 degrees C. The lattice match of buffer layers with R-Al2O3 and YBa2Cu3O7-delta wa s improved by doping of ceria with yttrium and neodymium corresponding ly, A bilayer structure Ce0.7Nd0.3O2-y/Ce0.68Y0.32O2-y/R-Al2O3 is prop osed as potential substrate material for YBa2Cu3O7-delta deposition.