INDUSTRIAL METALORGANIC CHEMICAL-VAPOR-DEPOSITION TECHNOLOGY FOR THE GROWTH OF YBA2CU3O7-DELTA

MOCVD is the established technology for the mass production of compoun d semiconductors for e.g. opts-electronic devices. To transfer the MOC VD technology for HTS films to the standard MOCVD technology used in s emiconductor production two major challenges have to be solved: 1. the Ba-precursor instability and 2. the demonstration of uniform depositi on of HTS films onto large area substrates. This paper presents an ind ustrial MOCVD process solving these challenges using a new stable fluo rinated Ba-precursor and a Gas Foil Rotation(R) susceptor. On a 2 inch diameter substrate area state-of-the-art YBCO thin films LI ere fabri cated having a thickness uniformity of 1% and compositional uniformity of 2% and 5% for Y/Ba and Cu/Ba, respectively. The films show a surfa ce morphology with low defect density (<5 within 100 mu m(2)) and exce llent superconducting properties (Ti (50%)>90 K, j(c) (T=77 K, (B=0T)> 5x10(6) A cm(-2)). The residual contamination by fluorine was determin ed by SIMS to be less than 250 ppm. This gives the strong evidence tha t this industrial process can be transferred to the Multiwafer Planeta ry Reactors(R) for mass production.