Growth of epitaxial SrTiO3 on epitaxial (Ti,Al)N/Si(100) substrate using Ti-buffer layer

Authors
Sano, K Ohara, R Kawakubo, T
Citation
K. Sano et al., Growth of epitaxial SrTiO3 on epitaxial (Ti,Al)N/Si(100) substrate using Ti-buffer layer, IEICE TR EL, E84C(6), 2001, pp. 808-813
Citations number
26
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEICE TRANSACTIONS ON ELECTRONICS
ISSN journal
09168524 → ACNP
Volume
E84C
Issue
6
Year of publication
2001
Pages
808 - 813
Database
ISI
SICI code
0916-8524(200106)E84C:6<808:GOESOE>2.0.ZU;2-G
Abstract
Epitaxial SrTiO3(STO) film on epitaxial (Ti,Al)N/Si(100) was successfully o btained using a Ti-buffer layer. The SrTiO3 him was (100) oriented and grew in parallel epitaxial relationship (cube-on-cube), i.e., (100)SrTiO3//(100 )(Ti,A1)N//(100)Si, (110) SrTiO3//(110) (Ti,AI)N//(110) Si. The Ti-buffer l ayer was grown on (Ti,Al)N hy magnetron sputtering, and the thickness of th e buffer layer was 2-10 nm, After the STO film was sputtered, the Ti-buffer layer was changed to polycrystalline anatase-TiO2.