Coulomb gap in the quantum Hall insulator

Citation
M. Backhaus et B. Huckestein, Coulomb gap in the quantum Hall insulator, INT J MOD B, 15(10-11), 2001, pp. 1369-1372
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
ISSN journal
02179792 → ACNP
Volume
15
Issue
10-11
Year of publication
2001
Pages
1369 - 1372
Database
ISI
SICI code
0217-9792(20010510)15:10-11<1369:CGITQH>2.0.ZU;2-T
Abstract
We calculate numerically the spectrum of disordered electrons in the lowest Landau level at filling factor 1/5 using the self-consistent Hartree-Fock approximation for systems containing up to 400 flux quanta. Special attenti on is paid to the correct treatment of the q = 0 component of the Coulomb i nteraction. For sufficiently strong disorder, the system is an insulator at this filling factor. We observe numerically a Coulomb gap in the single-pa rticle density of states (DOS). The DOS agrees quantitatively with the pred ictions for classical point charges.