Copper interconnects for semiconductor devices

Authors
Merchant, SM Kang, SH Sanganeria, M van Schravendijk, B Mountsier, T
Citation
Sm. Merchant et al., Copper interconnects for semiconductor devices, JOM-J MIN, 53(6), 2001, pp. 43-48
Citations number
41
Categorie Soggetti
Metallurgy
Journal title
JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY
ISSN journal
10474838 → ACNP
Volume
53
Issue
6
Year of publication
2001
Pages
43 - 48
Database
ISI
SICI code
1047-4838(200106)53:6<43:CIFSD>2.0.ZU;2-X
Abstract
Copper/low-k dielectric materials have been rapidly replacing conventional aluminum-alloy/SiO2-based interconnects in today's semiconductor devices. T his paper reviews the advantages of transitioning to copper/low-k interconn ects. Materials and process challenges during the fabrication of devices wi th copper/low-k interconnects are discussed. Reliability concerns associate d with such devices are highlighted.