CONDUCTION MECHANISM IN TRANSITION-METAL OXIDES

Citation
E. Matsushita et A. Tanase, CONDUCTION MECHANISM IN TRANSITION-METAL OXIDES, Physica. B, Condensed matter, 237, 1997, pp. 21-23
Citations number
5
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
09214526
Volume
237
Year of publication
1997
Pages
21 - 23
Database
ISI
SICI code
0921-4526(1997)237:<21:CMITO>2.0.ZU;2-R
Abstract
Electrical conduction in 3d transition-metal oxide compounds (e.g., Sc -doped SrTiO3) with oxygen vacancy is studied from the theoretical vie wpoint. A conduction mechanism due to the motion of proton tunneling a nd hopping in the double minimum potential between two oxygen ions is proposed in the hole-doped perovskite structure with Ti-site substitut ion by Sc. Furthermore, 3d-2p electronic properties in the proton cond ucting Ti-oxides are discussed in comparison with those in high-T-c su perconducting Cu-oxides.